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This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
FDS9953A Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
±25
ID
Drain Current
Continuous (Note 1a) Pulsed
±2.9
A
±10
PD
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6
1
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
FDS9953A Features
2.9 A, 30 V RDS(ON) = 130 m @ VGS = 10 V RDS(ON) = 200 m @ VGS = 4.5 V Low gate charge (2.5nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability