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FDS2170N3, FDS2170N7, FDS2180AC

Table of contents:
Info of FDS2170N3
Info of FDS2170N7
Info of FDS2180AC

FDS2170N3, FDS2170N7, FDS2180AC Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:09+

FDS2170N3, FDS2170N7, FDS2180AC Datasheet download

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Part Number: FDS2170N3

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOP-8

D/C: 09+

Description: MOSFET N-CHAN 200V 3A 8SOIC

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FDS2170N3 Parameters

Technical/Catalog Information	FDS2170N3
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	128 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	1292pF @ 100V
Power - Max	1.8W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	8-SOIC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS2170N3 FDS2170N3 FDS2170N3CT ND FDS2170N3CTND FDS2170N3CT

FDS2170N3 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low R_DS(ON) in a small package.

FDS2170N3 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	200	V
V_GSS	Gate-Source Voltage	± 20	V
I_D	Drain Current Continuous (Note 1a) Pulsed	3.0	A
I_D	Drain Current Continuous (Note 1a) Pulsed	20	A
P_D	Power Dissipation (Note 1a) (Note 1b)	3.0	W
P_D	Power Dissipation (Note 1a) (Note 1b)	1.8	W
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDS2170N3 Features

• 3.0 A, 200 V. R_DS(ON) = 128 m @ V_GS = 10 V
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability
• Fast switching, low gate charge (26nC typical)
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size

FDS2170N3 Typical Application

• Synchronous rectifier
• DC/DC converter

FDS2170N3 Connection Diagram

FDS2170N7 Parameters

Technical/Catalog Information	FDS2170N7
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	128 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	1292pF @ 100V
Power - Max	1.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	8-SOIC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS2170N7 FDS2170N7 FDS2170N7TR ND FDS2170N7TRND FDS2170N7TR

FDS2170N7 General Description

FDS2170N7 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	200	V
V_GSS	Gate-Source Voltage	± 20	V
I_D	Drain Current Continuous (Note 1a) Pulsed	3.0	A
I_D	Drain Current Continuous (Note 1a) Pulsed	20	A
P_D	Power Dissipation (Note 1a) (Note 1b)	3.0	W
P_D	Power Dissipation (Note 1a) (Note 1b)	1.8	W
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDS2170N7 Features

• 3.0 A, 200 V. R_DS(ON) = 128 m @ V_GS = 10 V
• High performance trench technology for extremely low R_DS(ON)• High power and current handling capability
• Fast switching, low gate charge (26nC typical)
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size

FDS2170N7 Typical Application

• Synchronous rectifier
• DC/DC converter

FDS2170N7 Connection Diagram

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