MOSFET 200V NCh PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3 A | ||
Resistance Drain-Source RDS (on) : | 0.128 Ohms | Configuration : | Single Seven Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Reel |
Symbol | Parameter |
Ratings |
Units |
VDSS | Drain-Source Voltage |
200 |
V |
VGSS | Gate-Source Voltage |
± 20 | |
ID | Drain Current Continuous (Note 1a) Pulsed |
3.0 |
A |
20 | |||
PD | Power Dissipation (Note 1a) (Note 1b) |
3.0 |
W |
1.8 | |||
TJ, TSTG | Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
This FDS2170N7 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. FDS2170N7 has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Technical/Catalog Information | FDS2170N7 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 3A |
Rds On (Max) @ Id, Vgs | 128 mOhm @ 3A, 10V |
Input Capacitance (Ciss) @ Vds | 1292pF @ 100V |
Power - Max | 1.8W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 36nC @ 10V |
Package / Case | 8-SOIC |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS2170N7 FDS2170N7 FDS2170N7TR ND FDS2170N7TRND FDS2170N7TR |