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FDS1537, FDS2070N3, FDS2070N7

Table of contents:
Info of FDS1537
Info of FDS2070N3
Info of FDS2070N7

FDS1537, FDS2070N3, FDS2070N7 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SMD-8 D/C:03 04

FDS1537, FDS2070N3, FDS2070N7 Datasheet download

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Part Number: FDS2070N3

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SMD-8

D/C: 03 04

Description: MOSFET N-CHAN 150V 4.1A 8SOIC

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FDS2070N3 Parameters

Technical/Catalog Information	FDS2070N3
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	4.1A
Rds On (Max) @ Id, Vgs	78 mOhm @ 4.1A, 10V
Input Capacitance (Ciss) @ Vds	1884pF @ 75V
Power - Max	1.8W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	53nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS2070N3 FDS2070N3 FDS2070N3CT ND FDS2070N3CTND FDS2070N3CT

FDS2070N3 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low R_DS(ON) in a small package.

FDS2070N3 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	150	V
V_GSS	Gate-Source Voltage	± 20	V
I_D	Drain Current Continuous (Note 1a) Pulsed	4.1	A
I_D	Drain Current Continuous (Note 1a) Pulsed	30	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	3.0	W
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.8	W
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDS2070N3 Features

• 4.1 A, 150 V. R_DS(ON) = 78 m @ V_GS = 10 V
R_DS(ON) = 88 m @ V_GS = 6.0 V
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability
• Fast switching, low gate charge (38nC typical)
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size

FDS2070N3 Typical Application

• Synchronous rectifier
• DC/DC converter

FDS2070N3 Connection Diagram

FDS2070N7 Parameters

Technical/Catalog Information	FDS2070N7
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	4.1A
Rds On (Max) @ Id, Vgs	78 mOhm @ 4.1A, 10V
Input Capacitance (Ciss) @ Vds	1884pF @ 75V
Power - Max	1.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	53nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS2070N7 FDS2070N7 FDS2070N7TR ND FDS2070N7TRND FDS2070N7TR

FDS2070N7 General Description

FDS2070N7 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	150	V
V_GSS	Gate-Source Voltage	± 20	V
I_D	Drain Current Continuous (Note 1a) Pulsed	4.1	A
I_D	Drain Current Continuous (Note 1a) Pulsed	30	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	3.0	W
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b)	1.8	W
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDS2070N7 Features

FDS2070N7 Typical Application

• Synchronous rectifier
• DC/DC converter

FDS2070N7 Connection Diagram

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