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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FDS6694 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±16
V
ID
Drain Current Continuous (Note 1a) Pulsed
12
A
50
PD
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)
2.5
W
1.4
1.2
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +175
°C
FDS6694 Features
· 12 A, 30 V. RDS(ON) = 11 mW @ VGS = 10 V RDS(ON) = 13.5 mW @ VGS = 4.5 V · Low gate charge (13 nC typical) · High performance trench technology for extremely low RDS(ON) · High power and current handling capability.
FDS6694 Typical Application
· DC/DC converter · Power management · Load switch