MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:09+
FDS6680S, FDS6680S/A, FDS6680S/R4 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: SOP-8
D/C: 09+
Description: MOSFET SCHOTTKY N-CH 30V 8-SOIC
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PDF/DataSheet Download
Datasheet: FDS6680S
File Size: 227622 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS100BA60
File Size: 301116 KB
Manufacturer: SANREX [SanRex Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS100BA60
File Size: 301116 KB
Manufacturer: SANREX [SanRex Corporation]
Download : Click here to Download
| Technical/Catalog Information | FDS6680S |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 11.5A |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 11.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2010pF @ 15V |
| Power - Max | 1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 24nC @ 5V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS6680S FDS6680S |
The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDS6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
30 |
V |
|
VGSS |
Gate-Source Voltage |
+20 |
V |
|
ID |
Draint Current - Continuous (Note 1) |
11.5 |
A |
|
- Pulsed |
50 | ||
|
PD |
Power Dissipation for Single Operation (Note 1a) |
2.5 |
W |
|
(Note 1b) |
1.2 | ||
|
(Note 1c)
|
1
| ||
|
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
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