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FDS6678A_NL, FDS6678A-NL, FDS6679

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Info of FDS6678A_NL
Info of FDS6678A-NL
Info of FDS6679

FDS6678A_NL, FDS6678A-NL, FDS6679 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:1000 D/C:06+

FDS6678A_NL, FDS6678A-NL, FDS6679 Datasheet download

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Part Number: FDS6679

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 1000

D/C: 06+

Description: MOSFET P-CH 30V 13A 8SOIC

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FDS6679 Parameters

Technical/Catalog Information	FDS6679
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	9 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	3939pF @ 15V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	100nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6679 FDS6679

FDS6679 General Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R_DS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FDS6679 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-30	V
V_GSS	Gate-Source Voltage	±25	V
I_D	Drain Current Continuous (Note 1a) Pulsed	-13	A
I_D	Drain Current Continuous (Note 1a) Pulsed	-50	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1.0
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +175	°C

FDS6679 Features

` 13 A, 30 V. R_DS(ON) = 9 mW @ V_GS = 10 V
R_DS(ON) = 13 mW @ V_GS = 4.5 V
` Extended VGSS range (±25V) for battery applications
` High performance trench technology for extremely low R_DS(ON)` High power and current handling capability

FDS6679 Connection Diagram

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