Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
FDS6575 Maximum Ratings
Symbol
Parameter
FDS8433A
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current - Continuous (Note 1a) - Pulsed
-10
A
-50
PD
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)
2.5
W
1.2
1
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
FDS6575 Features
-10 A, -20 V. RDS(ON) = 0.013 W @ VGS = -4.5 V, RDS(ON) = 0.017 W @ VGS = -2.5 V. Low gate charge (50nC typical). High performance trench technology for extremely low RDS(ON) High power and current handling capability.