MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+
FDS4072N7, FDS4080N3, FDS4080N7 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: N/A
D/C: 09+
Description: MOSFET N-CHAN 40V 13A 8SOIC
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PDF/DataSheet Download
Datasheet: FDS4072N7
File Size: 204304 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS4080N3
File Size: 260330 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDS4080N7
File Size: 269159 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDS4072N7 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 12.4A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 13.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 4299pF @ 20V |
| Power - Max | 1.5W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 46nC @ 4.5V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS4072N7 FDS4072N7 FDS4072N7DKR ND FDS4072N7DKRND FDS4072N7DKR |
| Symbol | Parameter | Ratings | Units |
| V DSS | Drain-Source Voltage | 40 | V |
| V GSS | Gate-Source Voltage | ±12 | V |
| ID | Drain Current - ContinuouS (Note 1a) - Pulsed |
12.4 | A |
| 60 | |||
| PD | Power Dissipation (Note 1a) (Note 1b) |
3.0 | W |
| 1.5 | |||
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to +150 |
| Technical/Catalog Information | FDS4080N3 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 13A |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 13A, 10V |
| Input Capacitance (Ciss) @ Vds | 1750pF @ 20V |
| Power - Max | 3W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS4080N3 FDS4080N3 FDS4080N3TR ND FDS4080N3TRND FDS4080N3TR |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
40 |
V |
|
VGSS |
Gate-Source Voltage |
+20 |
V |
|
ID |
Draint Current - Continuous (Note 1) |
13 |
A |
|
- Pulsed |
60 | ||
|
PD |
Power Dissipation for Single Operation (Note 1a) |
3.9
|
W |
|
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
| Technical/Catalog Information | FDS4080N7 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 13A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 13A, 10V |
| Input Capacitance (Ciss) @ Vds | 1750pF @ 20V |
| Power - Max | 3.9W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS4080N7 FDS4080N7 FDS4080N7DKR ND FDS4080N7DKRND FDS4080N7DKR |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
40 |
V |
|
VGSS |
Gate-Source Voltage |
+20 |
V |
|
ID |
Draint Current - Continuous (Note 1) |
13 |
A |
|
- Pulsed |
60 | ||
|
PD |
Power Dissipation for Single Operation (Note 1a) |
3.9
|
W |
|
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
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