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FDS35606, FDS3572, FDS3572_NL

Table of contents:
Info of FDS35606
Info of FDS3572
Info of FDS3572_NL

FDS35606, FDS3572, FDS3572_NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SO-8 D/C:2009+

FDS35606, FDS3572, FDS3572_NL Datasheet download

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Part Number: FDS3572

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SO-8

D/C: 2009+

Description: MOSFET N-CH 80V 8.9A 8SOIC

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FDS3572 Parameters

Technical/Catalog Information	FDS3572
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	8.9A
Rds On (Max) @ Id, Vgs	16 mOhm @ 8.9A, 10V
Input Capacitance (Ciss) @ Vds	1990pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	41nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS3572 FDS3572

FDS3572 General Description

• Primary switch for Isolated DC/DC converters
• Distributed Power and Intermediate Bus Architectures
• High Voltage Synchronous Rectifier for DC Bus Converters

FDS3572 Maximum Ratings

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	80	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TA = 25oC, VGS = 10V, RJA = 55oC/W)	8.9	A
	Continuous (TA = 25 C, VGS = 5V, RJA = 55 C/W)	5.6	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy ( Note 1)	515	mJ
PD	Power dissipation	2.5	W
PD	Derate above 25oC	20	mW/oC
TJ, TSTG	Operating and Storage Temperature	-55 to 150	oC

FDS3572 Features

•r_DS(ON) = 14mΩ (Typ.), V_GS = 10V, I_D = 8.9A
•Q_g(tot) = 31nC (Typ.), V_GS = 10V
• Low Miller Charge
•Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)

FDS3572 Connection Diagram

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