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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
This MOSFET features very low R DS(ON) in a small SOT23 footprint. Fairchild's PowerTrench technology provides faster switching than other MOSFETs with comparable R DS(ON) specifications. The result is higher overall efficiency with less board space.
FDN5630 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current - Continuous (Note 1a) - Pulsed
1.7
A
10
PD
Power Dissipation for Single Operation (Note 1a) (Note 1b)
0.5
W
0.46
TJ, Tstg
Operating and StorageJunctionTemperatureRange
-55 to +150
FDN5630 Features
*1.7 A, 60 V. R DS(ON) = 0.100 @ VGS = 10 V R DS(ON) = 0.120 @ VGS = 6 V.
*Optimized for use in high frequency DC/DC converters. * Low gate charge. * Very fast switching. * SuperSOTTM - 3 provides low R DS(ON) in SOT23 footprint.