FDN5630

MOSFET SSOT-3 N-CH 60V

product image

FDN5630 Picture
SeekIC No. : 00145969 Detail

FDN5630: MOSFET SSOT-3 N-CH 60V

floor Price/Ceiling Price

US $ .15~.26 / Piece | Get Latest Price
Part Number:
FDN5630
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.26
  • $.22
  • $.18
  • $.15
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.7 A
Resistance Drain-Source RDS (on) : 0.073 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 1.7 A
Resistance Drain-Source RDS (on) : 0.073 Ohms
Package / Case : SuperSOT


Features:

*1.7 A, 60 V. R DS(ON)  = 0.100 @ VGS  = 10 V
                      R DS(ON) = 0.120 @ VGS =  6 V.

*Optimized for use in  high frequency DC/DC converters.
* Low gate charge.
* Very fast switching.
* SuperSOTTM  - 3 provides low R DS(ON) in SOT23 footprint.



Application

* DC/DC converter
* Motor drives



Specifications

 

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

60

V

VGSS

Gate-Source Voltage

±20

V

ID

Drain Current  - Continuous                  (Note 1a)
  - Pulsed

1.7

A

10

PD

Power Dissipation for Single Operation (Note 1a)
  (Note 1b)

0.5

W

0.46

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150




Description

This FDN5630 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

This FDN5630 MOSFET features  very low R DS(ON) in a small  SOT23 footprint.  Fairchild's PowerTrench technology provides faster switching than other MOSFETs with comparable R DS(ON)  specifications.  The result is  higher overall efficiency with less board space.


Parameters:

Technical/Catalog InformationFDN5630
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C1.7A
Rds On (Max) @ Id, Vgs100 mOhm @ 1.7A, 10V
Input Capacitance (Ciss) @ Vds 400pF @ 15V
Power - Max460mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 10V
Package / CaseSSOT-3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDN5630
FDN5630
FDN5630TR ND
FDN5630TRND
FDN5630TR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Connectors, Interconnects
Crystals and Oscillators
Resistors
Test Equipment
Line Protection, Backups
Circuit Protection
View more