FDN359AN

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SSOT-3
Continuous Drain Current : 2.7 A
Resistance Drain-Source RDS (on) : 0.037 Ohms


Features:

2.7 A, 30 V. R_DS(ON) = 0.046@ V_GS = 10 V

R_DS(ON) = 0.060@ V_GS = 4.5 V.
Very fast switching.
Low gate charge (5nC typical).
High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-2.7	A
		-15
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b)	0.5	W
		0.46
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDN359AN N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

The FDN359AN is a N-channel logic level PowerTrench MOSFET.This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features of the FDN359AN are:(1)very fast switching; (2)low gate charge (5nC typical); (3)high power version of industry standard SOT-23 package.Identical pin out to SOT-23 with 30% higher power handling capability.Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

The absolute maximum ratings of the FDN359AN can be summarized as:(1)gate-source voltage:±20V;(2)storage junction temperature range:-55 to 150;(3)operating junction temperature range:-55 to 150;(4)drain-source voltage:30V;(5)power dissipation:0.5 W.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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Parameters:

Technical/Catalog Information	FDN359AN
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	2.7A
Rds On (Max) @ Id, Vgs	46 mOhm @ 2.7A, 10V
Input Capacitance (Ciss) @ Vds	480pF @ 10V
Power - Max	460mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7nC @ 5V
Package / Case	Super SOT-3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN359AN FDN359AN FDN359ANTR ND FDN359ANTRND FDN359ANTR