FDN304PZ

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 2.4 A
Package / Case : SuperSOT
Resistance Drain-Source RDS (on) : 0.052 Ohms


Features:

2.4 A,  20 V.  R _DS(ON) = 52 m @ V_GS = 4.5 V 
                              R _DS(ON) = 70 m @ V_GS = 2.5 V 
                              R _DS(ON) = 100 m @V_GS = 1.8 V 
Fast switching speed  
ESD protection diode 
High performance trench technology for extremely low R _DS(ON)  
SuperSOT^TM  -3 provides low R _DS(ON)  and 30% higher power handling capability than SOT23 in the same footprint

 

Application

Battery management 
Load switch
Battery protection


Specifications

 

Symbol	Parameter	FDN338P	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current  - Continuous            (Note 1a)                        - Pulsed	-2.4	A
		-10
PD	Maximum Power Dissipation            (Note 1a)                                                         (Note 1b)	0.5	W
		0.46
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This FDN304PZ P-Channel 1.8V specified MOSFET uses  Fairchild's advanced low voltage PowerTrench process.  It has been optimized for battery power management  applications.  


Parameters:

Technical/Catalog Information	FDN304PZ
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.4A
Rds On (Max) @ Id, Vgs	52 mOhm @ 2.4A, 4.5V
Input Capacitance (Ciss) @ Vds	1310pF @ 10V
Power - Max	460mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	20nC @ 4.5V
Package / Case	SuperSOT?-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDN304PZ FDN304PZ FDN304PZDKR ND FDN304PZDKRND FDN304PZDKR