MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220/TO-262(I2PAK) D/C:`06+(pb-free)
FDI33N25, FDI3632, FDI3652 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220/TO-262(I2PAK)
D/C: `06+(pb-free)
Description: MOSFET N-CH 100V 61A TO-262AA
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PDF/DataSheet Download
Datasheet: FDI038AN06A0
File Size: 287554 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDI3632
File Size: 274194 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDI3652
File Size: 278792 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDI3632 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 6000pF @ 25V |
| Power - Max | 310W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-262AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDI3632 FDI3632 |
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain to Source Voltage | 100 | V |
| VGS | Gate to Source Voltage | ±20 |
V |
| ID | Drain Current Continuous (TC < 111, VGS = 10V) |
80 | A |
| Continuous (Tamb = 25, VGS= 10V, RJA= 43/W) | 12 | A | |
| Pulsed | Figure 4 | A | |
| EAS | Single Pulse Avalanche Energy (Note 1) | 393 | mJ |
| PD | Power dissipation | 310 | W |
| Derate above 25 | 2.07 | W/ | |
| TJ, TSTG | Operating and Storage Temperature | -55 to 175 |
| Technical/Catalog Information | FDI3652 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 61A |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 61A, 10V |
| Input Capacitance (Ciss) @ Vds | 2880pF @ 25V |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 53nC @ 10V |
| Package / Case | TO-262AA |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDI3652 FDI3652 |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V |
|
VGSS |
Gate-Source Voltage |
±20 |
V |
|
ID |
Drain Current
Continuous (TC = 25, VGS = 10V) |
61 |
A |
|
Continuous (TC = 100, VGS = 10V) |
43 |
A | |
|
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W) |
9 |
A | |
|
Pulsed |
Figure 4 |
A | |
|
EAS |
Single Pulse Avalanche Energy (Note 1) |
182 |
mJ |
|
PD |
Power dissipation |
150 |
W |
|
Derate above 25 |
1.0 |
W/°C | |
|
TJ, Tstg |
Operating and Storage Temperature |
-55 to 175 |
°C |
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