Position: Home  > All Categories> Integrated Circuits (ICs) > FDI2532

FDI2532

MOSFET 150V N-Ch UltraFET Trench

product image

FDI2532 Picture
See larger image
SeekIC No. : 00159623 Detail

FDI2532: MOSFET 150V N-Ch UltraFET Trench

FDI2532 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FDI2532
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 79 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.016 Ohms
Continuous Drain Current : 79 A


Features:

*rDS(ON)  = 14m (Typ.), VGS = 10V, ID  = 33A
*Qg (tot) = 82nC (Typ.), VGS = 10V
*Low Miller Charge
*Low QRR  Body Diode
*UIS Capability (Single Pulse and Repetitive Pulse)
*Qualified to AEC Q101
Formerly developmental type 82884


Application

* DC/DC converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V Systems
* High Voltage Synchronous Rectifier
* Direct Injection / Diesel Injection Systems
* 42V Automotive Load Control
* Electronic Valve Train Systems


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 150
 V
VGS
Gate to Source Voltage		 ±20
 V
ID
 Drain Current
Continuous (TC= 25, VGS = 10V) 		 79 A
Continuous (TC = 100, VGS = 10V)  56 A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)  8 A
Pulsed Figure 4 A
EAS
 Single Pulse Avalanche Energy (Note 1) 400 mJ
PD
 Power dissipation 310 W
Derate above 25 2.07 W/
TJ, TSTG
 Operating and Storage Temperature -55 to 175



Parameters:

Technical/Catalog InformationFDI2532
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C79A
Rds On (Max) @ Id, Vgs16 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds 5870pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs107nC @ 10V
Package / CaseTO-262AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDI2532
FDI2532



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Transformers
TM-09210
BV222-1-00992
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Isolators
HCPL062N
HCPL316J
Cable Assemblies
CS1W-CN114
XW2Z-500T
Discrete Semiconductor Products
T508N12TOF
MUR20040
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
View more