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FDI2532_Q

MOSFET 150V N-Ch UltraFET Trench

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SeekIC No. : 00166198 Detail

FDI2532_Q: MOSFET 150V N-Ch UltraFET Trench

FDI2532_Q Data Sheet

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Part Number:
FDI2532_Q
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 79 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.016 Ohms
Continuous Drain Current : 79 A


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