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FDI047AN08AO, FDI1394P11AEC, FDI2532

FDI047AN08AO, FDI1394P11AEC, FDI2532 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-262  D/C:`06+(pb-free)

FDI047AN08AO, FDI1394P11AEC, FDI2532 Picture

FDI047AN08AO, FDI1394P11AEC, FDI2532 Datasheet download

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Part Number: FDI047AN08AO

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-262

D/C: `06+(pb-free)

Description: MOSFET N-CH 150V 79A TO-262AB

 

 
 
 
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FDI047AN08AO Suppliers

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  • FDI18-187L

  • D/C: 02+&   Adddate: 2024-12-22
  • Inquire Now
  • TCLT Co.,LTD.   China
    Contact: Ms.BrandyHua  
    Tel: 86-755-29929313ext801
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About FDI038AN06A0

PDF/DataSheet Download

Datasheet: FDI038AN06A0

File Size: 287554 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDI1394P11AEC Suppliers

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  • FDI18-187L

  • D/C: 02+&   Adddate: 2024-12-22
  • Inquire Now
  • TCLT Co.,LTD.   China
    Contact: Ms.BrandyHua  
    Tel: 86-755-29929313ext801
    Fax: --
    (0)

About FDI038AN06A0

PDF/DataSheet Download

Datasheet: FDI038AN06A0

File Size: 287554 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDI2532 Suppliers

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  • FDI18-187L

  • D/C: 02+&   Adddate: 2024-12-22
  • Inquire Now
  • TCLT Co.,LTD.   China
    Contact: Ms.BrandyHua  
    Tel: 86-755-29929313ext801
    Fax: --
    (0)

About FDI2532

PDF/DataSheet Download

Datasheet: FDI2532

File Size: 282266 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDI2532 Parameters

Technical/Catalog InformationFDI2532
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C79A
Rds On (Max) @ Id, Vgs16 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds 5870pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs107nC @ 10V
Package / CaseTO-262AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDI2532
FDI2532

FDI2532 Maximum Ratings

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 150
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
Continuous (TC= 25, VGS = 10V) 
79 A
Continuous (TC = 100, VGS = 10V)  56 A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)  8 A
Pulsed Figure 4 A
EAS
Single Pulse Avalanche Energy (Note 1) 400 mJ
PD
Power dissipation 310 W
Derate above 25 2.07 W/
TJ, TSTG
Operating and Storage Temperature -55 to 175

FDI2532 Features

*rDS(ON)  = 14m (Typ.), VGS = 10V, ID  = 33A
*Qg (tot) = 82nC (Typ.), VGS = 10V
*Low Miller Charge
*Low QRR  Body Diode
*UIS Capability (Single Pulse and Repetitive Pulse)
*Qualified to AEC Q101
Formerly developmental type 82884

FDI2532 Typical Application

* DC/DC converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V Systems
* High Voltage Synchronous Rectifier
* Direct Injection / Diesel Injection Systems
* 42V Automotive Load Control
* Electronic Valve Train Systems

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