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FDFS2P102A-NL, FDFS2P102-NL, FDFS2P103

FDFS2P102A-NL, FDFS2P102-NL, FDFS2P103 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:SMD  D/C:06 07

FDFS2P103 Picture

FDFS2P102A-NL, FDFS2P102-NL, FDFS2P103 Datasheet download

Five Points

Part Number: FDFS2P103

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SMD

D/C: 06 07

Description: MOSFET/SCHOTTKY P-CH 30V 8SOIC

 

 
 
 
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About FDF5680

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Datasheet: FDF5680

File Size: 451513 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • PUJIA TECH. DEVELOP. CO., LTD   China
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  • FDFMA2P853

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About FDF5680

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Datasheet: FDF5680

File Size: 451513 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDFS2P103 Suppliers

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  • FDFS2P103A_Q

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  • PUJIA TECH. DEVELOP. CO., LTD   China
    Contact: Mr.Lin   MSN:salepj@hotmail.com
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  • FDF25CA120

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    Tel: 86-755-83624945
    Fax: 86-755-83624801
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  • FDF60BA60

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  • PUJIA TECH. DEVELOP. CO., LTD   China
    Contact: Mr.Lin   MSN:salepj@hotmail.com
    Tel: 86-755-83624945
    Fax: 86-755-83624801
    (357)

About FDFS2P103

PDF/DataSheet Download

Datasheet: FDFS2P103

File Size: 302933 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDFS2P103 Parameters

Technical/Catalog InformationFDFS2P103
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.3A
Rds On (Max) @ Id, Vgs59 mOhm @ 5.3A, 10V
Input Capacitance (Ciss) @ Vds 528pF @ 15V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs8nC @ 5V
Package / Case8-SOIC
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDFS2P103
FDFS2P103
FDFS2P103TR ND
FDFS2P103TRND
FDFS2P103TR

FDFS2P103 General Description

The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

FDFS2P103 Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
VGSS
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
30
±25
5.3
20
2
1.6
1
0.9
55 to +150
30
1
V
V
A

W



°C
V
A
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Junction Temperature Range

VRRM
IO

Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)

FDFS2P103 Features

• 5.3 A, 30V RDS(ON) = 59 mΩ @ VGS = 10 V RDS(ON) = 92 mΩ @ VGS = 4.5 V
• VF < 0.52 V @ 1 A (TJ = 125°C) VF < 0.57 V @ 1 A (TJ = 25°C)
• Schottky and MOSFET incorporated into single power surface mount SO-8 package
• Electrically independent Schottky and MOSFET pinout for design flexibility

FDFS2P103 Connection Diagram

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