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FDFMA3N109, FDFMC2P120, FDFMC2P120_NL

Table of contents:
Info of FDFMA3N109
Info of FDFMC2P120
Info of FDFMC2P120_NL

FDFMA3N109, FDFMC2P120, FDFMC2P120_NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:DFN D/C:0732+

FDFMA3N109, FDFMC2P120, FDFMC2P120_NL Datasheet download

Five Points

Part Number: FDFMA3N109

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: DFN

D/C: 0732+

Description: IC MOSFET/SCHOTTKY N-CH MICRO2X2

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FDFMA3N109 Parameters

Technical/Catalog Information	FDFMA3N109
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	2.9A
Rds On (Max) @ Id, Vgs	123 mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) @ Vds	220pF @ 15V
Power - Max	650mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	3nC @ 4.5V
Package / Case	Microfet 2x2
FET Feature	Diode (Isolated)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDFMA3N109 FDFMA3N109 FDFMA3N109CT ND FDFMA3N109CTND FDFMA3N109CT

FDFMC2P120 General Description

FDFMC2P120 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package.

This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance.

FDFMC2P120 Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		20 ±12 3.5 10 20 2 2.4 1.2 55 to +150	V V A V A W °C
I_D	Drain Current Continuous Pulsed	(Note 1a)
V_RRM	Schottky Repetitive Peak Reverse Voltage
I_O	Schottky Average Forward Current	(Note a)
P_D	Power Dissipation (Steady State)	(Note 1a) (Note 1b)
T_J,T_STG	Operating and Storage Junction Temperature Range

FDFMC2P120 Features

• 2 A, 20 V R_DS(ON) = 125 mΩ @ V_GS= 4.5 V R_DS(ON) = 200 mΩ @ V_GS = 2.5 V
• Low Profile 0.8mm maximum in the new package MicroFET 3x3 mm

FDFMC2P120 Typical Application

• Buck Boost

FDFMC2P120 Connection Diagram

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