Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
RDS(ON)= 150m @ VGS = 2.5 V GS Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm
FDFM2N111 Typical Application
Standard Buck Converter
FDFM2N111 Connection Diagram
FDFM2P110 Parameters
Technical/Catalog Information
FDFM2P110
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
P-Channel
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25° C
3.5A
Rds On (Max) @ Id, Vgs
140 mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) @ Vds
280pF @ 10V
Power - Max
800mW
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
4nC @ 4.5V
Package / Case
6-MLP
FET Feature
Diode (Isolated)
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDFM2P110 FDFM2P110
FDFM2P110 General Description
FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance.
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.
FDFMA2P853 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS VGSS ID VRRM
IO
PD TJ, TSTG
MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current -Continuous -Pulsed Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current Power dissipation for Single Operation Power dissipation for Single Operation Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a) (Note 1a) (Note 1b)
-20 ±8 -2.2 -6 20 1 1.4 0.7 -55 to +150
V V A
V A
W oC
FDFMA2P853 Features
MOSFET: · -3.0 A, -20V. RDS(ON) = 120 mΩ @ VGS = -4.5 V RDS(ON) = 160 mΩ @ VGS = -2.5 V RDS(ON) = 240 mΩ @ VGS = -1.8 V · Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm Schottky: · VF < 0.46 V @ 500 mA
