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FDFN5-250, FDFS2P102, FDFS2P102A

FDFN5-250, FDFS2P102, FDFS2P102A Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:Standard  D/C:N/A

FDFS2P102 Picture

FDFN5-250, FDFS2P102, FDFS2P102A Datasheet download

Five Points

Part Number: FDFS2P102

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: Standard

D/C: N/A

Description: MOSFET/SCHOTTKY P-CHAN 20V 8SOIC

 

 
 
 
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About FDF5680

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Datasheet: FDF5680

File Size: 451513 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About FDFS2P102

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Datasheet: FDFS2P102

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Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About FDFS2P102A

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Datasheet: FDFS2P102A

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Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDFS2P102 Parameters

Technical/Catalog InformationFDFS2P102
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.3A
Rds On (Max) @ Id, Vgs125 mOhm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds 270pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs10nC @ 10V
Package / Case8-SOIC
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDFS2P102
FDFS2P102
FDFS2P102TR ND
FDFS2P102TRND
FDFS2P102TR

FDFS2P102 General Description

The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

FDFS2P102 Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-20
±20
-3.3
-20
2
1.6
1
0.9
-55 to +150
V
V
ID
Drain Current - Continuous
- Pulsed

(Note 1a)

A
PD
Power Dissipation for Dual Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Temperature Range
°C

FDFS2P102 Features

• 3.3 A, 20 V. RDS(ON) = 0.125 Ω @ VGS = 10 V RDS(ON) = 0.200 Ω @ VGS = 4.5 V.
• VF < 0.39 V @ 1 A (TJ = 125 oC).
VF < 0.47 V @ 1 A.
VF < 0.58 V @ 2 A.
• Schottky and MOSFET incorporated into single power surface mount SO-8 package.
• Electrically independent Schottky and MOSFET pinout for design flexibility.

FDFS2P102 Typical Application

• DC/DC converters
• Load Switch
• Motor Drives

FDFS2P102 Connection Diagram

FDFS2P102A Parameters

Technical/Catalog InformationFDFS2P102A
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.3A
Rds On (Max) @ Id, Vgs125 mOhm @ 3.3A, 10V
Input Capacitance (Ciss) @ Vds 182pF @ 10V
Power - Max900mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs3nC @ 5V
Package / Case8-SOIC
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDFS2P102A
FDFS2P102A
FDFS2P102ACT ND
FDFS2P102ACTND
FDFS2P102ACT

FDFS2P102A General Description

The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

FDFS2P102A Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
±20
3.3
10
2
1.6
1
0.9
55 to +150
20
1
V
V
A

W



°C
V
A
ID
Drain Current Continuous Pulsed (Note 1a)
PD
Power Dissipation for Dual Operation (Note 1a)
(Note 1b)
(Note 1c)
Power Dissipation for Single Operation
TJ, TSTG Operating and Storage Junction Temperature Range

VRRM

Schottky Repetitive Peak Reverse Voltage
IO
Schottky Average Forward Current (Note 1a)

FDFS2P102A Features

• 3.3 A, 20 V RDS(ON) = 125 mΩ @ VGS = 10 VRDS(ON) = 200 mΩ @ VGS = 4.5 V
• VF < 0.39 V @ 1 A (TJ = 125°C) VF < 0.47 V @ 1 A VF < 0.58 V @ 2 A
• Schottky and MOSFET incorporated into single power surface mount SO-8 package
• Electrically independent Schottky and MOSFET pinout for design flexibility

FDFS2P102A Connection Diagram

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