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The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
FDFS2P102 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
-20 ±20 -3.3 -20 2 1.6 1 0.9 -55 to +150
V V
ID
Drain Current - Continuous - Pulsed
(Note 1a)
A
PD
Power Dissipation for Dual Operation
(Note 1a) (Note 1b) (Note 1c)
W
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Temperature Range
°C
FDFS2P102 Features
• 3.3 A, 20 V. RDS(ON) = 0.125 Ω @ VGS = 10 V RDS(ON) = 0.200 Ω @ VGS = 4.5 V. • VF < 0.39 V @ 1 A (TJ = 125 oC). VF < 0.47 V @ 1 A. VF < 0.58 V @ 2 A. • Schottky and MOSFET incorporated into single power surface mount SO-8 package. • Electrically independent Schottky and MOSFET pinout for design flexibility.
The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
FDFS2P102A Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
20 ±20 3.3 10 2 1.6 1 0.9 55 to +150 20 1
V V A
W
°C V A
ID
Drain Current Continuous Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
(Note 1a) (Note 1b) (Note 1c)
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
VRRM
Schottky Repetitive Peak Reverse Voltage
IO
Schottky Average Forward Current
(Note 1a)
FDFS2P102A Features
• 3.3 A, 20 V RDS(ON) = 125 mΩ @ VGS = 10 VRDS(ON) = 200 mΩ @ VGS = 4.5 V • VF < 0.39 V @ 1 A (TJ = 125°C) VF < 0.47 V @ 1 A VF < 0.58 V @ 2 A • Schottky and MOSFET incorporated into single power surface mount SO-8 package • Electrically independent Schottky and MOSFET pinout for design flexibility