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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
2.14 100 52
°C/W °C/W °C/W
FDD8876 Features
• rDS(ON) = 8.2mΩ, VGS = 10V, ID = 35A • rDS(ON) = 10mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability
FDD8876 Typical Application
• DC/DC converters
FDD8878 Parameters
Technical/Catalog Information
FDD8878
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
40A
Rds On (Max) @ Id, Vgs
15 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds
880pF @ 15V
Power - Max
40W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
26nC @ 10V
Package / Case
DPak, SC-63, TO-252 (2 leads+tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDD8878 FDD8878
FDD8878 General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
3.75 100 52
°C/W °C/W °C/W
FDD8878 Features
·rDS(ON) = 15mΩ, VGS = 10V, ID = 35A ·rDS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A ·High performance trench technology for extremely low rDS(ON) ·Low gate charge ·High power and current handling capability
FDD8878 Typical Application
· DC/DC converters
FDD8880 Parameters
Technical/Catalog Information
FDD8880
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
58A
Rds On (Max) @ Id, Vgs
9 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds
1260pF @ 15V
Power - Max
55W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
31nC @ 10V
Package / Case
DPak, SC-63, TO-252 (2 leads+tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDD8880 FDD8880
FDD8880 General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
2.73 100 52
°C/W °C/W °C/W
FDD8880 Features
• rDS(ON) = 9mW, VGS = 10V, ID = 35A • rDS(ON) = 12mW, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability
