FDD10AN06A0

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.0094 Ohms


Features:

• r_DS(ON) = 9.4mΩ (Typ.), V_GS = 10V, I_D = 50A
• Qg(tot) = 28nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101


Application

• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems


Specifications

Symbol	Parameter	Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	60 ±20 50 11 Figure 4 429 135 0.9 -55 to 175	V V A A A mJ W W/°C °C
ID	Drain Current Continuous (TC < 115°C, VGS = 10V) Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 2)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC RJA RJA

Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

1.11 100 52

°C/W °C/W °C/W

Parameters:

Technical/Catalog Information	FDD10AN06A0
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	1840pF @ 25V
Power - Max	135W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	37nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD10AN06A0 FDD10AN06A0 FDD10AN06A0DKR ND FDD10AN06A0DKRND FDD10AN06A0DKR