MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SOT-252 D/C:2006
FDD107AN06LA0, FDD107AN06LAO, FDD10AN06A0 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: SOT-252
D/C: 2006
Description: MOSFET N-CH 60V 50A D-PAK
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PDF/DataSheet Download
Datasheet: FDD107AN06LA0
File Size: 230857 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD03-05D
File Size: 457928 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD10AN06A0
File Size: 242568 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDD107AN06LA0 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 10.9A |
| Rds On (Max) @ Id, Vgs | 91 mOhm @ 10.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 360pF @ 25V |
| Power - Max | 25W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 5.5nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD107AN06LA0 FDD107AN06LA0 |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
60 ±20 10.9 10 7.1 3.4 Figure 4 9 25 0.17 -55 to 175 |
V V A A A A A mJ W W/°C °C |
|
ID |
Drain Current Continuous (TC = 25°C, VGS = 10V) Continuous (TC = 25°C, VGS = 5V) Continuous (TC = 100°C, VGS = 5V) Continuous (TA = 25°C, VGS = 5V, RJA = 52°C/W) Pulsed | ||
|
EAS |
Single Pulse Avalanche Energy (Note 2) | ||
|
PD |
Power dissipation Derate above 25°C | ||
| TJ,TSTG | Operating and Storage Temperature |
| RJC RJA RJA |
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area |
6.0 100 52 |
°C/W °C/W °C/W |
| Technical/Catalog Information | FDD10AN06A0 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 1840pF @ 25V |
| Power - Max | 135W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 37nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD10AN06A0 FDD10AN06A0 FDD10AN06A0DKR ND FDD10AN06A0DKRND FDD10AN06A0DKR |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
60 ±20 50 11 Figure 4 429 135 0.9 -55 to 175 |
V V A A A mJ W W/°C °C |
|
ID |
Drain Current Continuous (TC < 115°C, VGS = 10V) Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W) Pulsed | ||
|
EAS |
Single Pulse Avalanche Energy (Note 2) | ||
|
PD |
Power dissipation Derate above 25°C | ||
| TJ,TSTG | Operating and Storage Temperature |
| RJC RJA RJA |
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area |
1.11 100 52 |
°C/W °C/W °C/W |
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