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FDD16AN08A0, FDD16AN08AO, FDD20AN06A0

Table of contents:
Info of FDD16AN08A0
Info of FDD16AN08AO
Info of FDD20AN06A0

FDD16AN08A0, FDD16AN08AO, FDD20AN06A0 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT-252 D/C:2006

FDD16AN08A0, FDD16AN08AO, FDD20AN06A0 Datasheet download

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Part Number: FDD16AN08A0

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOT-252

D/C: 2006

Description: MOSFET N-CH 60V 45A D-PAK

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FDD16AN08A0 Parameters

Technical/Catalog Information	FDD16AN08A0
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	16 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	1874pF @ 25V
Power - Max	135W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	47nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD16AN08A0 FDD16AN08A0 FDD16AN08A0CT ND FDD16AN08A0CTND FDD16AN08A0CT

FDD16AN08A0 Maximum Ratings

Symbol	Parameter	Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	75 ±20 50 9 Figure 4 95 135 0.9 -55 to 175	V V A A A mJ W W/°C °C
ID	Drain Current Continuous (TC < 79°C, VGS = 10V) Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 1)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC
RJA
RJA

Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area

1.11
100
52

°C/W
°C/W
°C/W

FDD16AN08A0 Features

• r_DS(ON) = 13mΩ (Typ.), V_GS= 10V, I_D = 50A
• Qg(tot) = 31nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101

FDD16AN08A0 Typical Application

• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems

FDD20AN06A0 Parameters

Technical/Catalog Information	FDD20AN06A0
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	45A
Rds On (Max) @ Id, Vgs	20 mOhm @ 45A, 10V
Input Capacitance (Ciss) @ Vds	950pF @ 25V
Power - Max	90W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	19nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD20AN06A0 FDD20AN06A0

FDD20AN06A0 Maximum Ratings

Symbol	Parameter	Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	60 ±20 45 32 8 Figure 4 50 90 0.60 -55 to 175	V V A A A A mJ W W/°C °C
ID	Drain Current Continuous (TC = 25°C, VGS = 10V) Continuous (TC = 100°C, VGS = 10V) Continuous (Tamb = 25°C, VGS = 10V, RJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 1)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC
RJA
RJA

Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area

1.67
100
52

°C/W
°C/W
°C/W

FDD20AN06A0 Features

• r_DS(ON) = 17mΩ (Typ.), V_GS = 10V, I_D = 45A
• Qg(tot) = 15nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101

FDD20AN06A0 Typical Application

• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems

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