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FDD8796, FDD8870, FDD8874

Table of contents:
Info of FDD8796
Info of FDD8870
Info of FDD8874

FDD8796, FDD8870, FDD8874 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:252 D/C:04+

FDD8796, FDD8870, FDD8874 Datasheet download

Five Points

Part Number: FDD8796

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 252

D/C: 04+

Description: MOSFET N-CH 30V 116A D-PAK

Price Break

1
10
100
250
500
1000

Unit Price

.92000
.69000
.51750
.38180
.32200
.30590

Extended Price

0.92
6.90
51.75
95.45
161.00
305.90

(All prices are in USD) Prices for reference only

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FDD8796 Parameters

Technical/Catalog Information	FDD8796
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	5.7 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	2610pF @ 13V
Power - Max	88W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD8796 FDD8796 FDD8796DKR ND FDD8796DKRND FDD8796DKR

FDD8796 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r_DS(on) and fast switching speed.

FDD8796 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DS	Drain to Source Voltage	25	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current -Continuous (Package Limited)	35	A
	-Continuous (Die Limited)	98
	-Pulsed 1	305
E_AS	Single Pulse Avalanche Energy 2	91	mJ
P_D	Power Dissipation	88	W
T_J,T_STG	Operating and Storage Temperature	-55 to 175	°C

FDD8796 Features

` Max r_DS(on) = 5.7m at V_GS = 10V, I_D = 35A
` Max r_DS(on) = 8.0m at V_GS = 4.5V, I_D = 35A
` Low gate charge: Qg(10) = 37nC(Typ), V_GS = 10V
` Low gate resistance
` Avalanche rated and 100% tested
` RoHS Compliant

FDD8796 Typical Application

· Vcore DC-DC for Desktop Computers and Servers
· VRM for Intermediate Bus Architecture

FDD8870 Parameters

Technical/Catalog Information	FDD8870
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	160A
Rds On (Max) @ Id, Vgs	3.9 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	5160pF @ 15V
Power - Max	160W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	118nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD8870 FDD8870

FDD8870 General Description

FDD8870 Maximum Ratings

Symbol	Parameter	Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	30 ±20 160 150 21 Figure 4 690 160 1.07 -55 to 175	V V A A A A mJ W W/°C °C
ID	Drain Current Continuous (TC = 25°C, V GS = 10V) (Note 1) Continuous (TC = 25°C, V GS = 4.5V) (Note 1) Continuous (Tamb = 25°C, VGS = 10V, with RqJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 1)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC
RJA
RJA

Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area

0.94
100
52

°C/W
°C/W
°C/W

FDD8870 Features

• r_DS(ON) = 3.9mW, V_GS= 10V, I_D = 35A
• r_DS(ON) = 4.4mW, V_GS = 4.5V, I_D = 35A
• High performance trench technology for extremely low r_DS(ON)• Low gate charge
• High power and current handling capability

FDD8874 Parameters

Technical/Catalog Information	FDD8874
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	116A
Rds On (Max) @ Id, Vgs	5.1 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	2990pF @ 15V
Power - Max	110W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	72nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD8874 FDD8874

FDD8874 General Description

FDD8874 Maximum Ratings

Symbol	Parameter	Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage	30 ±20 116 103 18 Figure 4 240 110 0.73 -55 to 175	V V A A A A A mJ W W/°C °C
ID	Drain Current Continuous (TC = 25°C, V GS = 10V) (Note 1) Continuous (TC = 25°C, V GS = 4.5V) (Note 1) Continuous (Tamb = 25°C, VGS = 10V, with RqJA = 52°C/W) Pulsed
EAS	Single Pulse Avalanche Energy (Note 2)
PD	Power dissipation Derate above 25°C
TJ,TSTG	Operating and Storage Temperature

THERMAL CHARACTERISTICS

RJC
RJA
RJA

Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area

1.36
100
52

°C/W
°C/W
°C/W

FDD8874 Features

• r_DS(ON)= 5.1mW, V_GS = 10V, I_D = 35A
• r_DS(ON) = 6.4mW, V_GS = 4.5V, I_D = 35A
• High performance trench technology for extremely low r_DS(ON)
• Low gate charge
• High power and current handling capability

FDD8874 Typical Application

• DC/DC converters

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