MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:TO-252 D/C:00+
FDD6680S, FDD6682, FDD6685 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: TO-252
D/C: 00+
Description: MOSFET P-CH 30V 11A DPAK
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PDF/DataSheet Download
Datasheet: FDD6680S
File Size: 100584 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD6682
File Size: 124303 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD6685
File Size: 119347 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDD6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±20 55 100 60 3.1 1.3 55 to +150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed |
(Note 3) (Note 1a) | ||
|
PD |
Power Dissipation | (Note 1) (Note 1a) (Note 1b) | ||
|
TJ, TSTG |
Operating and Storage Junction Temperature Range | |||
| RJC RJA RJA |
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient |
(Note 1) (Note 1a) (Note 1b) |
2.1 40 96 |
°C/W °C/W °C/W |
| Technical/Catalog Information | FDD6682 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 6.2 mOhm @ 17A, 10V |
| Input Capacitance (Ciss) @ Vds | 2400pF @ 15V |
| Power - Max | 1.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 31nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD6682 FDD6682 |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current Continuous (Note 3) Pulsed (Note 1a) |
75 | A |
| 100 | |||
| PD | Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b) |
71 | W |
| 3.8 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +175 | °C |
75 A, 30 V RDS(ON) = 6.2 m@ VGS = 10 V
RDS(ON) = 8.0 m@ VGS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
low RDS(ON)
DC/DC converter
Motor Drives
| Technical/Catalog Information | FDD6685 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 11A, 10V |
| Input Capacitance (Ciss) @ Vds | 1715pF @ 15V |
| Power - Max | 1.6W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 24nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD6685 FDD6685 FDD6685CT ND FDD6685CTND FDD6685CT |
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±25 40 11 100 52 3.8 1.6 55 to +175 |
V V | |
|
ID |
Continuous Drain Current @TC=25°C @TA=25°C Pulsed, PW £ 100µs |
(Note 3) (Note 1a) (Note 1b) |
A | |
|
PD |
Power Dissipation for Single Operation |
(Note 1) (Note 1a) (Note 1b) |
W | |
|
TJ, TSTG |
Operating and Storage Junction Temperature Range |
°C | ||
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