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FDD6680A, FDD6680AS, FDD6680AS_NL

Table of contents:
Info of FDD6680A
Info of FDD6680AS
Info of FDD6680AS_NL

FDD6680A, FDD6680AS, FDD6680AS_NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT-252 D/C:99+

FDD6680A, FDD6680AS, FDD6680AS_NL Datasheet download

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Part Number: FDD6680AS

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOT-252

D/C: 99+

Description: MOSFET N-CH SYNC 30V 55A DPAK

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FDD6680A Parameters

Technical/Catalog Information	FDD6680A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds	1425pF @ 15V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	20nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6680A FDD6680A

FDD6680A General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

FDD6680A Maximum Ratings

Symbol	Parameter		NDS9936	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 56 14 100 60 2.8 1.3 55 to +175	V V A W °C
ID	Continuous Drain Current @TC=25°C @TA=25°C Pulsed	(Note 3) (Note 1a) (Note 1a)
PD	Power Dissipation @TC=25°C @TA=25°C @TA=25°C	(Note 3) (Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

FDD6680A Features

· 56 A, 30 V R_DS(ON) = 9.5 mW @ V_GS = 10 V R_DS(ON) = 13 mW @ V_GS = 4.5 V
· Low gate charge
· Fast Switching
· High performance trench technology for extremely low RDS(ON)

FDD6680A Typical Application

· DC/DC converter
· Motor Drives

FDD6680AS Parameters

Technical/Catalog Information	FDD6680AS
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	55A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 15V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	29nC @ 15V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6680AS FDD6680AS

FDD6680AS General Description

The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.

FDD6680AS Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 55 100 60 3.1 1.3 55 to +150	V
I_D	Drain Current - Continuous - Pulsed	(Note 3) (Note 1a)		A
P_D	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)		W
T_J, T_STG	Operating and Storage Temperature Range			°C

FDD6680AS Features

• 55 A, 30 V RDS(ON) max= 10.5 mΩ @ VGS = 10 V RDS(ON) max= 13.0 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (21nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

FDD6680AS Typical Application

• DC/DC converter
• Low side notebook

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