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FDD6676AS_NL, FDD6676S, FDD6680

Table of contents:
Info of FDD6676AS_NL
Info of FDD6676S
Info of FDD6680

FDD6676AS_NL, FDD6676S, FDD6680 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:Standard D/C:07+

FDD6676AS_NL, FDD6676S, FDD6680 Datasheet download

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Part Number: FDD6676AS_NL

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: Standard

D/C: 07+

Description: MOSFET N-CH 30V DPAK

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FDD6676S General Description

The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R_DS(ON) and low gate charge. The FDD6676S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.

FDD6676S Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±16	V
I_D	Drain Current Continuous (Note 3) Pulsed (Note 1a)	78	A
I_D	Drain Current Continuous (Note 3) Pulsed (Note 1a)	100	A
P_D	Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b)	70	W
		3.1
		1.3
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDD6676S Features

78 A, 30 V R_DS(ON) = 6.0 m @ V_GS = 10 V
R_DS(ON) = 7.1 m @ V_GS = 4.5 V

Low gate charge

Fast Switching

High performance trench technology for extremely
low R_DS(ON)

FDD6676S Typical Application

DC/DC converter

FDD6676S Connection Diagram

FDD6680 Parameters

Technical/Catalog Information	FDD6680
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	10 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	1230pF @ 15V
Power - Max	1.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	18nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6680 FDD6680

FDD6680 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

FDD6680 Maximum Ratings

Symbol	Parameter		NDS9936	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 46 12 100 56 3.3 1.5 55 to +175	V V A W °C
I_D	Continuous Drain Current @T_C=25°C @T_A=25°C Pulsed	(Note 3) (Note 1a) (Note 1a)
P_D	Power Dissipation @T_C=25°C @T_A=25°C @T_A=25°C	(Note 3) (Note 1a) (Note 1b)
T_J,T_STG	Operating and Storage Junction Temperature Range

FDD6680 Features

· 46 A, 30 V R_DS(ON) = 10 mW @ V_GS = 10 V R_DS(ON) = 15 mW @ V_GS = 4.5 V
· Low gate charge
· Fast Switching Speed
· High performance trench technology for extremely low RDS(ON)

FDD6680 Typical Application

· DC/DC converter
· Motor Drives

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