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FDD6676, FDD6676A, FDD6676AS

Table of contents:
Info of FDD6676
Info of FDD6676A
Info of FDD6676AS

FDD6676, FDD6676A, FDD6676AS Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT-252 D/C:01+

FDD6676, FDD6676A, FDD6676AS Datasheet download

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Part Number: FDD6676AS

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOT-252

D/C: 01+

Description: MOSFET N-CH SYNC 30V 90A DPAK

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FDD6676 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_{DS( ON)} and fast switching speed. extremely low R_DS(ON) in a small package.

FDD6676 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±16	V
I_D	Drain Current Continuous (Note 3) Pulsed (Note 1a)	78	A
I_D	Drain Current Continuous (Note 3) Pulsed (Note 1a)	100	A
P_D	Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b)	83	W
		3.8
		1.6
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +175	°C

FDD6676 Features

78 A, 30 V R_DS(ON) = 7.5 m @ V_GS = 10 V
R_DS(ON) = 8.5 m @ V_GS = 4.5 V
Low gate charge

Fast Switching
High performance trench technology for extremely
low R_DS(ON)

FDD6676 Typical Application

DC/DC converter
Motor Drives

FDD6676 Connection Diagram

FDD6676AS Parameters

Technical/Catalog Information	FDD6676AS
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	90A
Rds On (Max) @ Id, Vgs	5.7 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	2500pF @ 15V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	64nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6676AS FDD6676AS

FDD6676AS General Description

The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild's monolithic SyncFET technology.

FDD6676AS Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 90 100 70 3.1 1.3 55 to +150	V V
I_D	Drain Current - Continuous - Pulsed	(Note 3) (Note 1a)		A
P_D	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)		W
T_J, T_STG	Operating and Storage Temperature Range			°C

FDD6676AS Features

• 90 A, 30 V RDS(ON) = 5.7 mΩ @ VGS = 10 V RDS(ON) = 7.1 mΩ @ VGS = 4.5 V
• Includes SyncFET schottky body diode
• Low gate charge (46nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

FDD6676AS Typical Application

• DC/DC converter
• Low side notebook

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