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FDD6670S, FDD6672, FDD6672A

Table of contents:
Info of FDD6670S
Info of FDD6672
Info of FDD6672A

FDD6670S, FDD6672, FDD6672A Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-252 D/C:09+

FDD6670S, FDD6672, FDD6672A Datasheet download

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Part Number: FDD6672A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-252

D/C: 09+

Description: MOSFET N-CH 30V 65A D-PAK

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FDD6670S General Description

The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDD6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.

FDD6670S Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 64 100 70 3.2 1.3 55 to +150	V
I_D	Drain Current Continuous Pulsed	(Note 3) (Note 1a)		A
P_D	Power Dissipation	(Note 1) (Note 1a) (Note 1b)		W
T_J, T_STG	Operating and Storage Temperature Range			°C

FDD6670S Features

· 64 A, 30 V RDS(ON) = 9 mW @ VGS = 10 V RDS(ON) = 12.5 mW @ VGS = 4.5 V
· Includes SyncFET Schottky body diode
· Low gate charge (17nC typical)
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability

FDD6670S Typical Application

· DC/DC converter
· Motor Drives

FDD6672A Parameters

Technical/Catalog Information	FDD6672A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	65A
Rds On (Max) @ Id, Vgs	8 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds	5070pF @ 15V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	46nC @ 4.5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6672A FDD6672A

FDD6672A General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

FDD6672A Maximum Ratings

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±12 65 100 70 3.2 1.3 -55 to +150	V V A W °C
ID	Maximum Drain Current -Continuous TA = 25	(Note 1) (Note 1a)
PD	Maximum Power Dissipation TC = 25 TA = 25 TA = 25	(Note 1) (Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

FDD6672A Features

· 65 A, 30 V. R_DS(ON) = 9.5 mW @ V_GS= 4.5 V R_DS(ON) = 8 mW @ V_GS = 10 V
· High performance trench technology for extremely low _RDS(ON)· Low gate charge (33 nC typical)
· High power and current handling capability

FDD6672A Typical Application

· DC/DC converter

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