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FDD6670AL, FDD6670AS, FDD6670AS_NL

Table of contents:
Info of FDD6670AL
Info of FDD6670AS
Info of FDD6670AS_NL

FDD6670AL, FDD6670AS, FDD6670AS_NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

FDD6670AL, FDD6670AS, FDD6670AS_NL Datasheet download

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Part Number: FDD6670AL

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: .

D/C: 06+

Description: MOSFET N-CH SYNC 30V 76A DPAK

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FDD6670AL Parameters

Technical/Catalog Information	FDD6670AL
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	84A
Rds On (Max) @ Id, Vgs	5 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	3845pF @ 15V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	56nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6670AL FDD6670AL

FDD6670AL General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_{DS( ON)} and fast switching speed.

FDD6670AL Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (Note 3) Pulsed (Note 1a)	84	A
I_D	Drain Current Continuous (Note 3) Pulsed (Note 1a)	100	A
P_D	Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b)	83	W
		3.8
		1.6
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +175	°C

FDD6670AL Features

84 A, 30 V.  R_DS(ON) = 5 m @ V_GS = 10 V
                       R_DS(ON) = 6 m @ V_GS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
     low R_DS(ON)

FDD6670AL Typical Application

DC/DC converter
Motor Drives

FDD6670AL Connection Diagram

FDD6670AS Parameters

Technical/Catalog Information	FDD6670AS
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	76A
Rds On (Max) @ Id, Vgs	8 mOhm @ 13.8A, 10V
Input Capacitance (Ciss) @ Vds	1580pF @ 15V
Power - Max	1.3W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6670AS FDD6670AS FDD6670ASCT ND FDD6670ASCTND FDD6670ASCT

FDD6670AS General Description

The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a MOSFET monolithically integrated with a schottky diode. The performance of the FDD6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.

FDD6670AS Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 76 100 70 3.2 1.3 55 to +150	V V
I_D	Drain Current - Continuous - Pulsed	(Note 3) (Note 1a)		A
P_D	Power Dissipation	(Note 1a) (Note 1b) (Note 1c)		W
T_J, T_STG	Operating and Storage Temperature Range			°C

FDD6670AS Features

• 76 A, 30 V RDS(ON) max= 8.0 mΩ @ VGS = 10 V RDS(ON) max= 10.4 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (29nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

FDD6670AS Typical Application

• DC/DC converter
• Low side notebook

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