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This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDD6670A Maximum Ratings
Symbol
Parameter
NDS9936
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
30 ±20 66 15 100 70 3.2 1.3 -55 to +150
V V A
W
°C
ID
Maximum Drain Current -Continuous TA = 25oC
(Note 1) (Note 1a)
Maximum Drain Current -Pulsed
PD
Maximum Power Dissipation TC = 25oC TA = 25oC TA = 25oC