MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-252 D/C:08+
FDD6635, FDD6637, FDD6644 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-252
D/C: 08+
Description: MOSFET P-CH 35V DPAK
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PDF/DataSheet Download
Datasheet: FDD6635
File Size: 155190 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD03-05D
File Size: 457928 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD6644
File Size: 86202 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDD6635 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 35V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 1400pF @ 20V |
| Power - Max | 1.6W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD6635 FDD6635 FDD6635DKR ND FDD6635DKRND FDD6635DKR |
This N-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 35 | V |
| VDS(Avalanche) | Drain-Source Avalanche Voltage (maximum) (Note 4) | 40 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) |
59 | A |
| 15 | |||
| 100 | |||
| PD | Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) |
55 | W |
| 3.8 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
| Technical/Catalog Information | FDD6637 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 35V |
| Current - Continuous Drain (Id) @ 25° C | 13A |
| Rds On (Max) @ Id, Vgs | 11.6 mOhm @ 14A, 10V |
| Input Capacitance (Ciss) @ Vds | 2370pF @ 20V |
| Power - Max | 1.3W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 63nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD6637 FDD6637 FDD6637TR ND FDD6637TRND FDD6637TR |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID |
Drain Current Continuous (Note 3) Pulsed (Note 1a) |
67 | A |
| 100 | |||
| PD | Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b) |
68 | W |
| 3.8 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +175 | °C |
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