MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
FDD6512A, FDD6530, FDD6530A Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 20V 21A D-PAK
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PDF/DataSheet Download
Datasheet: FDD6512A
File Size: 76531 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD6530A
File Size: 84380 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD6530A
File Size: 84380 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDD6512A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 10.7A |
| Rds On (Max) @ Id, Vgs | 21 mOhm @ 10.7A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1082pF @ 10V |
| Power - Max | 1.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 19nC @ 4.5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD6512A FDD6512A |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventionalswitching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 20 | V |
| VGSS | Gate-Source Voltage | ±12 | V |
| ID |
Continuous Drain Current @TC=25°C (Note 3) |
36 | A |
| 10.7 | |||
| PD | Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) |
100 | W |
| 3.8 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
36 A, 20 V RDS(ON) = 21 m @ VGS = 4.5 V
RDS(ON) = 31 m @ VGS = 2.5 V
Low gate charge (12 nC typical)
Fast switching
High performance trench technology for extremely
low RDS(ON)
DC/DC converter
Motor drives
| Technical/Catalog Information | FDD6530A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 32 mOhm @ 8A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 710pF @ 10V |
| Power - Max | 1.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 9nC @ 4.5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD6530A FDD6530A |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 20 | V |
| VGSS | Gate-Source Voltage | ±8 | V |
| ID | Drain Current Continuous (Note 3) Pulsed (Note 1a) |
21 | A |
| 100 | |||
| PD | Power Dissipation (Note 1) (Note 1a) (Note 1b) |
33 | W |
| 3.3 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +175 | °C |
21 A, 20 V RDS(ON) = 32 m@ VGS = 4.5 V
RDS(ON) = 47 m@ VGS = 2.5 V
Low gate charge (6.5 nC typical)
Fast switching
High performance trench technology for extremely
low RDS(ON)
.
DC/DC converter
Motor drives
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