MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT-252 D/C:05+
FDD6035AL-NL, FDD603AL, FDD6296 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: SOT-252
D/C: 05+
Description: MOSFET N-CH 30V 50A D-PAK
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PDF/DataSheet Download
Datasheet: FDD03-05D
File Size: 457928 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD603AL
File Size: 243254 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD6296
File Size: 107802 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDD6296 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 1440pF @ 15V |
| Power - Max | 1.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 31.5nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD6296 FDD6296 |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) |
50 | A |
| 15 | |||
| PD | Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) |
100 | W |
| 3.8 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +175 | °C |
50A, 30 V R DS(ON) = 8.8 m @ VGS = 10 V
R DS(ON) = 11.3 m @ VGS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
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