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FDD6030BL, FDD6030L, FDD6030L_NL

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Info of FDD6030BL
Info of FDD6030L
Info of FDD6030L_NL

FDD6030BL, FDD6030L, FDD6030L_NL Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:TO

FDD6030BL, FDD6030L, FDD6030L_NL Picture

FDD6030BL, FDD6030L, FDD6030L_NL Datasheet download

Five Points

Part Number: FDD6030BL

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: TO

Description: MOSFET N-CH 30V DPAK

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FDD6030BL General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

FDD6030BL Maximum Ratings

Symbol	Parameter		NDS9936	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 42 10 100 50 3.8 1.6 55 to +175	V V A W °C
ID	Continuous Drain Current @TC=25°C @TA=25°C Pulsed	(Note 3) (Note 1a) (Note 1a)
PD	Power Dissipation @TC=25°C @TA=25°C @TA=25°C	(Note 3) (Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

FDD6030BL Features

· 42 A, 30 V R_DS(ON) = 16 mW @ V_GS = 10 V R_DS(ON) = 22 mW @ V_GS = 4.5 V
· Low gate charge (22 nC typical)
· Fast switching
· High performance trench technology for extremely low R_DS(ON)

FDD6030BL Typical Application

· DC/DC converter
· Motor drives

FDD6030L Parameters

Technical/Catalog Information	FDD6030L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	14.5 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	1230pF @ 15V
Power - Max	1.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	28nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD6030L FDD6030L

FDD6030L General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FDD6030L Maximum Ratings

Symbol	Parameter		NDS9936	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±20 50 12 150 60 3.2 1.3 -55 to +150	V V A W °C
ID	Maximum Drain Current -Continuous	(Note 1) (Note 1a)
	Maximum Drain Current -Pulsed
PD	Maximum Power Dissipation @ TC = 25oC TA = 25oC TA = 25oC	(Note 1) (Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJC
RJA

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1)
(Note 1a)
(Note 1b)

2.1
39
96

°C/W
°C/W
°C/W

FDD6030L Features

• 50 A, 30 V. R_DS(ON) = 0.0135 W @ V_GS = 10 V R_DS(ON) = 0.0200 W @ V_GS = 4.5 V.
• Low gate charge.
• Fast switching speed.
• Low Crss.

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