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FDD45AN06LAO, FDD4685, FDD5202P

Table of contents:
Info of FDD45AN06LAO
Info of FDD4685
Info of FDD5202P

FDD45AN06LAO, FDD4685, FDD5202P Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

FDD45AN06LAO, FDD4685, FDD5202P Datasheet download

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Part Number: FDD4685

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: .

D/C: 06+

Description: MOSFET P-CHAN 40V 8.4A DPAK

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FDD4685 Parameters

Technical/Catalog Information	FDD4685
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	8.4A
Rds On (Max) @ Id, Vgs	27 mOhm @ 8.4A, 10V
Input Capacitance (Ciss) @ Vds	2380pF @ 20V
Power - Max	3W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	27nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD4685 FDD4685 FDD4685DKR ND FDD4685DKRND FDD4685DKR

FDD5202P General Description

This P-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

FDD5202P Maximum Ratings

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		-60 ±20 -8 -2.3 -15 39 2.8 1.3 -55 to +150	V V A W °C
ID	Maximum Drain Current -Continuous TA = 25	(Note 1) (Note 1a)
PD	Maximum Power Dissipation TC = 25 TA = 25 TA = 25	(Note 1) (Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

FDD5202P Features

• -8 A, -60 V. R_DS(on) = 0.3 W @ V_GS= -10 V R_DS(on) = 0.5 W @ V_GS = -4.5 V.
• Low gate charge (15.5nC typical).
• Fast switching speed.

FDD5202P Typical Application

• DC/DC converter
• Motor drives
• L.D.O.

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