MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-252(DPAK) D/C:06+
FDD3672-NL, FDD3680, FDD3680-NL Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-252(DPAK)
D/C: 06+
Description: MOSFET N-CH 100V 25A D-PAK
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PDF/DataSheet Download
Datasheet: FDD03-05D
File Size: 457928 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD3680
File Size: 76993 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD03-05D
File Size: 457928 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
| Technical/Catalog Information | FDD3680 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 25A |
| Rds On (Max) @ Id, Vgs | 46 mOhm @ 6.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 1735pF @ 50V |
| Power - Max | 1.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 53nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD3680 FDD3680 |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparableRDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 100 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current Continuous (Note 1) Drain Current Pulsed |
25 | A |
| 100 | |||
| PD | Maximum Power Dissipation (Note 1) (Note 1a) (Note 1b) |
68 | W |
| 3.8 | |||
| 1.6 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
25 A, 100 V. RDS(ON) = 46 mW @ VGS = 10 V
RDS(ON) = 51 mW @ VGS = 6 V
Low gate charge (38 nC typical)
Fast switching speed High performance trench technology for extremely
low RDS(ON)
High power and current handling capability.
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