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FDD3570, FDD3580, FDD3670

Table of contents:
Info of FDD3570
Info of FDD3580
Info of FDD3670

FDD3570, FDD3580, FDD3670 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-252 D/C:N.A

FDD3570, FDD3580, FDD3670 Datasheet download

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Part Number: FDD3570

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-252

D/C: N.A

Description: MOSFET N-CH 100V 34A D-PAK

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FDD3570 Parameters

Technical/Catalog Information	FDD3570
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	20 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 40V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	76nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD3570 FDD3570

FDD3570 General Description

This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

This MOSFET features faster switching and lower gate change than other MOSFETs with comparable R_DS(ON)specifications resulting in DC/DC power supply designs with higher overall efficiency.

FDD3570 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	80	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous (Note 3) Pulsed (Note 1a)	43	A
I_D	Drain Current Continuous (Note 3) Pulsed (Note 1a)	10	A
P_D	Power Dissipation @T_C=25°C (Note 3) @T_A=25°C (Note 1a) @T_A=25°C (Note 1b)	110	W
		3.4
		1.3
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDD3570 Features

10 A, 80 V. R_DS(ON) = 0.019 @ V_GS = 10 V
R_DS(ON) = 0.022 @ V_GS = 6 V.
Fast switching speed.
High performance trench technology for extremely
low R_DS(ON) .
High power and current handling capability.

FDD3570 Connection Diagram

FDD3580 Parameters

Technical/Catalog Information	FDD3580
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	7.7A
Rds On (Max) @ Id, Vgs	29 mOhm @ 7.7A, 10V
Input Capacitance (Ciss) @ Vds	1760pF @ 40V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	49nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD3580 FDD3580

FDD3580 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.

FDD3580 Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		80 ± 20 7.7 50 42 3.8 1.6 −55 to +175	V V A W °C
I_D	Maximum Drain Current-Continuous Maximum Drain Current Pulsed	(Note 1a)
P_D	Maximum Power Dissipation @T_C = 25oC T_A = 25oC T_A = 25oC	(Note 1) (Note 1a) (Note 1b)
T_J, T_STG	Operating and Storage Junction Temperature Range

FDD3580 Features

• 7.7 A, 80 V. R_DS(ON) = 29 mΩ @ V_GS = 10 V R_DS(ON) = 33 mΩ @ VGS = 6 V
• Low gate charge (34nC typical)
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

FDD3670 Parameters

Technical/Catalog Information	FDD3670
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	34A
Rds On (Max) @ Id, Vgs	32 mOhm @ 7.3A, 10V
Input Capacitance (Ciss) @ Vds	2490pF @ 50V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD3670 FDD3670

FDD3670 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R_DS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FDD3670 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	100	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current Continuous Drain Current Pulsed	34	A
I_D	Drain Current Continuous Drain Current Pulsed	100	A
P_D	Power Dissipation @T_C=25°C (Note 3) @T_A=25°C (Note 1a @T_A=25°C (Note 1b)	70	W
		3.2
		1.3
T_J, T_STG	Operating and Storage Junction Temperature Range	55 to +150	°C

FDD3670 Features

34 A, 100 V. R_DS(ON) = 0.030 @ V_GS= 10 V
R_DS(ON) = 0.033 @ V_GS = 6 V
Low gate charge (57 nC typical)
Fast switching speed
High performance trench technology for extremely
low R_DS(ON) High power and current handling capability.

FDD3670 Connection Diagram

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