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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FDD2612 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
200
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a) Pulsed
4.9
A
10
PD
Power Dissipation (Note 1) (Note 1a) (Note 1b)
42
W
3.8
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
FDD2612 Features
4.9 A, 200 V. RDS(ON) = 720 m @ VGS = 10 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching speed Low gate charge (8nC typical)
FDD2612 Typical Application
DC/DC converter
FDD2612 Connection Diagram
FDD2670 Parameters
Technical/Catalog Information
FDD2670
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25° C
3.6A
Rds On (Max) @ Id, Vgs
130 mOhm @ 3.6A, 10V
Input Capacitance (Ciss) @ Vds
1228pF @ 100V
Power - Max
1.3W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
43nC @ 10V
Package / Case
DPak, SC-63, TO-252 (2 leads+tab)
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
FDD2670 FDD2670
FDD2670 General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDD2670 Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
200
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1) Drain Current Pulsed
3.6
A
70
PD
Maximum Power Dissipation @ TC = 25°C (Note 1) @ TA = 25°C (Note 1a) @ TA = 25°C (Note 1b)
3.2
W
1.3
3.2
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
FDD2670 Features
3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability