MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
FDD2570, FDD2572, FDD2582 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 150V 21A D-PAK
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: FDD2570
File Size: 102327 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD2572
File Size: 253692 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDD2582
File Size: 274786 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDD2570 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 4.7A |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 4.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 1907pF @ 75V |
| Power - Max | 1.3W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 62nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD2570 FDD2570 |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 150 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current Continuous (Note 1a) Drain Current Pulsed |
4.7 | A |
| 30 | |||
| PD | Maximum Power Dissipation @ TC = 25°C (Note 1) @ TA = 25°C (Note 1a) @ TA = 25°C (Note 1b) |
70 | W |
| 3.2 | |||
| 1.3 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
| Technical/Catalog Information | FDD2572 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 29A |
| Rds On (Max) @ Id, Vgs | 54 mOhm @ 9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1770pF @ 25V |
| Power - Max | 135W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 34nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD2572 FDD2572 FDD2572CT ND FDD2572CTND FDD2572CT |
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
150 ±20 29 20 4 Figure 4 36 135 0.9 -55 to 175 |
V V A A A A mJ W W/°C °C |
|
ID |
Drain Current Continuous (TC = 25°C, VGS = 10V) (Note 1) Continuous (TC = 200°C, VGS = 10V) (Note 1) Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W) Pulsed | ||
|
EAS |
Single Pulse Avalanche Energy (Note 2) | ||
|
PD |
Power dissipation Derate above 25°C | ||
| TJ,TSTG | Operating and Storage Temperature |
| RJC RJA RJA |
Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area |
1.11 100 52 |
°C/W °C/W °C/W |
| Technical/Catalog Information | FDD2582 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 66 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds | 1295pF @ 25V |
| Power - Max | 95W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDD2582 FDD2582 |
The FDD2582 is designed as one kind of N-channel powertrench MOSFET that can be used in (1)DC/DC converters and off-line UPS; (2)distributed power architectures and VRMs; (3)Primary Switch for 24V and 48V Systems; (4)high voltage synchronous rectifier; (5)direct injection / diesel injection system; (6)42V Automotive load control; (7)electronic valve train system. Features of the FDD2582 are:(1)rDS(on)=58m (typ.), VG =10V, ID=7A;(2)Qg(tot)=19nC (typ.), VGS=10V;(3)low miller charge;(4)low QRR body diode;(5)UIS capability (single pulse and repetitive pulse);(6)qualified to AEC Q101.
The absolute maximum ratings of the FDD2582 can be summarized as:(1)drain to source voltage:150 V;(2)gate to source voltage:±20 V;(3)drain current continuous (Tc=25, VGS=10V):21 A;(4)single pulse avalanche energy:59 mJ;(5)power dissipation:95 W;(6)operating and storage temperature:-55 to 175 ;(7)thermal resistance junction to case TO-252:1.58 /W;(8)thermal resistance junction to ambient TO-252:100 /W;(9)thermal resistance junction to ambient TO-252, 1in copper pad area:52 /W. If you want to know more information such as the electrical characteristics about the FDD2582, please download the datasheet in www.seekic.com or www.chinaicmart.com .
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
Price: 5-6.5 USD
DL-7140-211M laser tube
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
