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FCPF11N60, FCPF11N60F, FCPF16N60

Table of contents:
Info of FCPF11N60
Info of FCPF11N60F
Info of FCPF16N60

FCPF11N60, FCPF11N60F, FCPF16N60 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:2007

FCPF11N60, FCPF11N60F, FCPF16N60 Datasheet download

Five Points

Part Number: FCPF11N60

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 2007

Description: MOSFET N-CHAN 600V 16A TO-220F

Price Break

1
10
100
250
500
1000
5000

Unit Price

2.00000
1.60000
1.20000
1.08000
1.06400
1.04000
1.00000

Extended Price

2.00
16.00
120.00
270.00
532.00
1040.00
5000.00

(All prices are in USD) Prices for reference only

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FCPF11N60 Parameters

Technical/Catalog Information	FCPF11N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	380 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	1490pF @ 25V
Power - Max	36W
Packaging	Tube
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FCPF11N60 FCPF11N60

FCPF11N60 General Description

SuperFET^TM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

FCPF11N60 Maximum Ratings

Symbol	Parameter		FCP11N60F	FCPF11N60F	Units
ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	(Note 1) (Note 2) (Note 1) (Note 1) (Note 3)	11 7 33	11 * 7 * 33 *	A A A V mJ A mJ V/ns W W/°C °C °C
			± 30 340 11 12.5 4.5
			125 1.0	36 0.29
			-55 to +150 300

FCPF11N60 Features

• 650V @Tj = 150°C
• Typ. Rds(on)=0.32Ω
• Ultra low gate charge (typ. Qg=40nC)
• Low effective output capacitance (typ. Coss.eff=95pF)
• 100% avalanche tested

FCPF11N60F Parameters

Technical/Catalog Information	FCPF11N60F
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	380 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	1490pF @ 25V
Power - Max	36W
Packaging	Tube
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FCPF11N60F FCPF11N60F

FCPF11N60F General Description

SuperFET^TM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

FCPF11N60F Maximum Ratings

Symbol	Parameter		FCP11N60F	FCPF11N60F	Units
ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	(Note 1) (Note 2) (Note 1) (Note 1) (Note 3)	11 7 33 ± 30	11 * 7 * 33 *	A A A V mJ A mJ V/ns W W/°C °C °C
			340 11 12.5 4.5
			125 1.0	36 * 0.29 *
			-55 to +150 300

FCPF11N60F Features

• 650V @TJ = 150°C
• Typ. RDS(on) = 0.32Ω
• Fast Recovery Type ( trr = 120ns)
• Ultra Low Gate Charge (typ. Qg = 40nC)
• Low Effective Output Capacitance (typ. Cosseff.=95pF)
• 100% avalanche tested

FCPF16N60 Parameters

Technical/Catalog Information	FCPF16N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	16A
Rds On (Max) @ Id, Vgs	260 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds	2250pF @ 25V
Power - Max	37.9W
Packaging	Tube
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FCPF16N60 FCPF16N60

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