MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:Module D/C:05+
FCP-031K, FCP0805H222J-J1, FCP11N60 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: Module
D/C: 05+
Description: IC SUPERFET N-CH 600V 11A TO220
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PDF/DataSheet Download
Datasheet: FCP11N60
File Size: 829872 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FCP11N60
File Size: 829872 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FCP11N60
File Size: 829872 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FCP0805H222J-J1 |
| Vendor | Cornell Dubilier Electronics (CDE) |
| Category | Capacitors |
| Capacitance | 2200pF |
| Voltage - Rated | 50V |
| Tolerance | ±5% |
| Dielectric Material | PPS (Polyphenylene Sulphide) |
| Package / Case | 0805 (2012 metric) |
| Packaging | Tape & Reel (TR) |
| Maximum Temperature | -55°C ~ 125°C |
| Lead Spacing | - |
| ESR (Equivalent Series Resistance) | - |
| Lifetime @ Temp. | 1000 Hrs @ 125°C |
| Mounting Type | Surface Mount |
| Features | General Purpose |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FCP0805H222J J1 FCP0805H222JJ1 |
| Technical/Catalog Information | FCP11N60 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1490pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 52nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FCP11N60 FCP11N60 |
SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
|
Symbol |
Parameter |
FCP11N60F |
FCPF11N60F |
Units | |
| ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL |
Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
(Note 1) (Note 2) (Note 1) (Note 1) (Note 3) |
11 7 33 |
11 * 7 * 33 * |
A A A V mJ A mJ V/ns W W/°C °C °C |
|
± 30 340 11 12.5 4.5 | |||||
|
125 1.0 |
36 0.29 | ||||
|
-55 to +150 300 | |||||
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