MFG:Fairchild Semiconductor Category:Transistors, FETs, IGBTs Package Cooled:TO- D/C:TO-
FCP12AC, FCP16N60, FCP20N60 Datasheet download
Category: Transistors, FETs, IGBTs
MFG: Fairchild Semiconductor
Package Cooled: TO-
D/C: TO-
Description: MOSFET N-CHAN 600V TO-220
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Datasheet: FCP12AC
File Size: 152823 KB
Manufacturer: ETC [ETC]
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PDF/DataSheet Download
Datasheet: FCP16N60
File Size: 922584 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FCP20N60
File Size: 1278012 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FCP16N60 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 260 mOhm @ 8A, 10V |
| Input Capacitance (Ciss) @ Vds | 2250pF @ 25V |
| Power - Max | 167W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 70nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FCP16N60 FCP16N60 |
SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
|
Symbol |
Parameter |
FCI11N60 |
Unit | ||
|
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL |
Drain-Source Voltage |
(Note 1) (Note 2) (Note 1) (Note 1) (Note 3) |
600 16 10.1 48 ± 30 450 16 16.7 4.5 167 1.33 -55 to +150 300 |
V A A A V mJ A mJ V/ns W W/°C °C °C | |
| Technical/Catalog Information | FCP20N60 |
| Vendor | Fairchild Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-220 |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 30.0 V [Max] |
| Continuous Drain Current (Id) | 20.00 A [Nom] |
| Rds On (Max) @ Id, Vgs | 190 mOhms @ 10A, 10V |
| Rds On (Typ) @ Id, Vgs | 150 mOhms @ 10A, 10V |
| Input Capacitance (Ciss) | 3080.0 pF @ 25.0 V |
| Power Dissipation | 208.000 W [Max] |
| Packaging | Tube |
| Protection Diode(s) | Drain to Source |
| Delay Time On | 62.00 ns [Typ] |
| Delay Time Off | 230.00 ns [Typ] |
| Rise Time | 140.000 ns [Typ] |
| Fall Time | 65.000 ns [Typ] |
| Vgs Min. | 3.00 V @ 250.0 A |
| Vgs Max. | 5.00 V @ 250.0 A |
| Drain Peak Current (Idm) | 60.000 A [Nom] |
| Operating Junction Temperature | -55 °C [Min] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FCP20N60 FCP20N60 |
SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
| Symbol | Parameter |
FCP20N60 |
FCPF20N60 |
Units |
| VDSS | Drain-Source Voltage |
600 |
V | |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
20
12.5 |
20*
12.5 * |
A
A |
| IDM | Drain Current - Pulsed (Note 1) |
60 |
60 * |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
690 |
mJ | |
| IAR | Avalanche Current (Note 1) |
20 |
A | |
| EAR | Repetitive Avalanche Energy (Note 1) |
20.8 |
mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns | |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
208
1.67 |
39
0.3 |
W
W/°C |
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C | |
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