FCB 3216-310, FCB11N60, FCB11N60F Selling Leads, Datasheet
MFG:TAIYO Package Cooled:. D/C:09+
FCB 3216-310, FCB11N60, FCB11N60F Datasheet download
Part Number: FCB 3216-310
MFG: TAIYO
Package Cooled: .
D/C: 09+
MFG:TAIYO Package Cooled:. D/C:09+
FCB 3216-310, FCB11N60, FCB11N60F Datasheet download
MFG: TAIYO
Package Cooled: .
D/C: 09+
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PDF/DataSheet Download
Datasheet: FCB11N60
File Size: 596000 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FCB11N60
File Size: 596000 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FCB11N60
File Size: 596000 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Symbol | Parameter |
FQD10N20C / FQU10N20C |
Units |
VDSS | Drain-Source Voltage |
600 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
11
7 |
A
A |
IDM | Drain Current - Pulsed (Note 1) |
33 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
340 |
mJ |
IAR | Avalanche Current (Note 1) |
11 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
12.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
125
1.0 |
W
W/°C |
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |