FCB20N60, FCB20N60F, FCB3216-310 Selling Leads, Datasheet
MFG:FAIRC Package Cooled:. D/C:TO-
FCB20N60, FCB20N60F, FCB3216-310 Datasheet download
Part Number: FCB20N60
MFG: FAIRC
Package Cooled: .
D/C: TO-
FCB20N60, FCB20N60F, FCB3216-310
- Table of contents:
Info of FCB20N60
Info of FCB20N60F
Info of FCB3216-310
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About FCB20N60
PDF/DataSheet Download
Datasheet: FCB20N60
File Size: 629248 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FCB11N60
PDF/DataSheet Download
Datasheet: FCB11N60
File Size: 596000 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FCB11N60
PDF/DataSheet Download
Datasheet: FCB11N60
File Size: 596000 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FCB20N60 General Description
SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
FCB20N60 Maximum Ratings
| Symbol | Parameter |
FCB20N60 |
Units |
| VDSS | Drain-Source Voltage |
600 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
20
12.5 |
A
A |
| IDM | Drain Current - Pulsed (Note 1) |
60 |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
690 |
mJ |
| IAR | Avalanche Current (Note 1) |
20 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
20.8 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
208
1.67 |
W
W/°C |
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
FCB20N60 Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.15Ω
• Ultra low gate charge (typ. Qg = 75nC)
• Low effective output capacitance (typ. Coss.eff = 165pF)
• 100% avalanche tested
• Typ. RDS(on) = 0.15Ω
• Ultra low gate charge (typ. Qg = 75nC)
• Low effective output capacitance (typ. Coss.eff = 165pF)
• 100% avalanche tested
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