F2016800, F2046, F2048 Selling Leads, Datasheet
MFG:1 Package Cooled:N/A D/C:08+
F2016800, F2046, F2048
- Table of contents:
Info of F2016800
Info of F2046
Info of F2048
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About F2000D
PDF/DataSheet Download
Datasheet: F2000D
File Size: 217154 KB
Manufacturer: OSRAM [OSRAM GmbH]
Download : Click here to Download
About F2046
PDF/DataSheet Download
Datasheet: F2046
File Size: 39802 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
About F2048
PDF/DataSheet Download
Datasheet: F2048
File Size: 38752 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
F2046 General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high FT enhance broadband performance.
F2046 Maximum Ratings
| Total Device Dissipation |
Junction to Case Thermal |
Maximum Junction Resistance |
Storage Temperature |
DC Drain Current Temperature |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
| 20Watts | 10/W | 200 | -65 to 150 | 0.8 A | 70V | 70V | 30V |
F2048 General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high FT enhance broadband performance.
F2048 Maximum Ratings
| Total Device Dissipation |
Junction to Case Thermal |
Maximum Junction Resistance |
Storage Temperature |
DC Drain Current Temperature |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
| 40Watts | 4.2/W | 200 | -65 to 150 | 3.2 A | 70V | 70V | 30V |
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