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Specifications TotalDeviceDissipation Junction to Case Thermal MaximumJunction Resistance StorageTemperature DC DrainCurrent Temperature Drain toGate Voltage Drain toSource Voltage Gate toSource Voltage 60Watts 3/W 200 -65 to 150 3.2 A 70V 70V 30VDescriptionSilicon VDMOS a...

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SeekIC No. : 004339937 Detail

F2004: Specifications TotalDeviceDissipation Junction to Case Thermal MaximumJunction Resistance StorageTemperature DC DrainCurrent Temperature Drain toGate Voltage Drain toSource Voltage Ga...

F2004 Data Sheet

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Part Number:: F2004
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/25

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Description

Specifications

Total Device Dissipation	Junction to Case Thermal	Maximum Junction Resistance	Storage Temperature	DC Drain Current Temperature	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
60Watts	3/W	200	-65 to 150	3.2 A	70V	70V	30V

Description

Silicon VDMOS and LDMOS transistors F2004 designed specifically for broadband RF applications.

F2004 is Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others."Polyfet"process features gold metal for greatly extended lifetime. Low output capacitance and highFTenhance broadband performance.

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F2004

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